Tīmeklis2015. gada 8. okt. · Abstract: In this paper, we propose a new seven transistors (7T) static random access memory (SRAM) cell that improves read stability and write ability of the conventional 6T SRAM cell. Separating read and write access transistors in this cell solves the conflict of access transistor sizing. TīmeklisOff the album "Stories Often Told" (2002)

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